Processing Optimization of Lead Magnesium Niobate-Lead Titanate Thin Films for Piezoelectric MEMS Application

被引：27

作者：

Bastani, Yaser ^{[1
]}

Bassiri-Gharb, Nazanin ^{[1
]}

机构：

[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2012年 / 95卷 / 04期

基金：

美国国家科学基金会;

关键词：

SINGLE-CRYSTALS; PMN-PT; ORIENTATION; ELECTRODES; CAPACITORS; DEPOSITION; NUCLEATION; ACTUATORS; IMPRINT; SENSORS;

D O I：

10.1111/j.1551-2916.2011.05042.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report processing conditions and electromechanical properties of highly textured, 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) films, processed via chemical solution deposition on platinized silicon substrates. Textured perovskite seed layers, optimization of heat treatment conditions and Pb content control were studied to obtain pure perovskite PMN-PT films with dense, columnar grains. Highly (100)- and (111)-oriented films, with Lotgering factors between 91% and 97%, and average grain size up to similar to 430 nm were synthesized on thin PbTiO3 and Pb(Zr,Ti)O-3 seed layers. Overall, (100)-textured films showed higher dielectric permittivity and saturated d(33,f) piezo-electric coefficients. Dense, submicron-thick, (100)-oriented films showed low-field, relative dielectric permittivity of up to similar to 2850 (tan delta = 0.02) at 1 kHz, and remnant polarization values up to 17.5 mu C/cm(2). The films showed saturated d(33,f) piezo-electric coefficients as high as 210 pm/V.

引用

页码：1269 / 1275

页数：7

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