Properties of morphotropic phase boundary Pb(Mg1/3Nb2/3)O3-PbTiO3 films with submicrometre range thickness on Si-based substrates

被引:14
作者
Alguero, M. [1 ]
Stewart, M. [2 ]
Cain, M. G. [2 ]
Ramos, P. [3 ]
Ricote, J. [1 ]
Calzada, M. L. [1 ]
机构
[1] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
[2] Natl Phys Lab, Teddington TW11 0LW, Middx, England
[3] Univ Alcala de Henares, Dept Elect, Alcala De Henares 28871, Spain
关键词
PIEZOELECTRIC PROPERTIES; ELECTROMECHANICAL PROPERTIES; THIN-FILMS; DOMAIN-WALL; BEHAVIOR; DEPENDENCE; STRAIN; MOTION;
D O I
10.1088/0022-3727/43/20/205401
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical properties of (1 - x)Pb(Mg1/3Nb2/3)O-3 - xPbTiO(3) films with composition in the morphotropic phase boundary region around x = 0.35, submicrometre thickness and columnar microstructure, prepared on Si-based substrates by chemical solution deposition are presented and discussed in relation to the properties of coarse and fine grained ceramics. The films show relaxor characteristics that are proposed to result from a grain size effect on the kinetics of the relaxor to ferroelectric transition. The transition is slowed down for grain sizes in the submicrometre range, and as a consequence intermediate polar domain configurations with typical length scales in the submicrometre- and nanoscales are stabilized. A high saturation polarization can be attained under field, but fast polarization relaxation occurs after its removal, and negligible remanent values are obtained. At the same time, they also show spontaneous piezoelectricity and pyroelectricity. Self-polarization is thus present, which indicates the existence of an internal electric field that is most probably a substrate effect. Films would then be in a phase instability, at an intermediate state between the relaxor and ferroelectric ones, and under a bias electric field, which would explain the very high spontaneous pyroelectric response found.
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页数:7
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