Electromechanical transducers at the nanoscale: Actuation and sensing of motion in nanoelectromechanical systems (NEMS)

被引:218
作者
Ekinci, KL [1 ]
机构
[1] Boston Univ, Dept Aeronaut & Mech Engn, Boston, MA 02215 USA
关键词
actuators; nanoelectromechanical systems (NEMS); nanotechnology; sensors;
D O I
10.1002/smll.200500077
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electromechanical devices are rapidly being miniaturized, following the trend in commercial transistor electronics. Miniature electromechanical devices-now with dimensions in the deep sub-micrometer range-are envisioned for a variety of applications as well as for accessing interesting regimes in fundamental physics. Among the most important technological challenges in the operation of these nanoelectromechanical systems (NEMS) are the actuation and detection of their sub-nanometer displacements at high firequencies. In this Review, we shall focus on this most central concern in NEMS technology: realization of electromechanical transducers at the nanoscale. The currently available techniques to actuate and detect NEMS motion are introduced, and the accuracy, bandwidth, and robustness of these techniques are discussed.
引用
收藏
页码:786 / 797
页数:12
相关论文
共 81 条
[1]   LOW-TEMPERATURE FORCE MICROSCOPE WITH ALL-FIBER INTERFEROMETER [J].
ALBRECHT, TR ;
GRUTTER, P ;
RUGAR, D ;
SMITH, DPE .
ULTRAMICROSCOPY, 1992, 42 :1638-1646
[2]   Classical dynamics of a nanomechanical resonator coupled to a single-electron transistor [J].
Armour, AD ;
Blencowe, MP ;
Zhang, Y .
PHYSICAL REVIEW B, 2004, 69 (12)
[3]   GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy [J].
Beck, RG ;
Eriksson, MA ;
Topinka, MA ;
Westervelt, RM ;
Maranowski, KD ;
Gossard, AC .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1149-1151
[4]   Microelectromechanical deformable mirrors [J].
Bifano, TG ;
Perreault, J ;
Mali, RK ;
Horenstein, MN .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (01) :83-89
[5]   Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor [J].
Blencowe, MP ;
Wybourne, MN .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3845-3847
[6]   Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor [J].
Blencowe, MP .
NOISE AND INFORMATION IN NANOELECTRONICS, SENSORS AND STANDARDS, 2003, 5115 :64-73
[7]   VACUUM TUNNELING PROBE - A NONRECIPROCAL, REDUCED-BACK-ACTION TRANSDUCER [J].
BOCKO, MF ;
STEPHENSON, KA ;
KOCH, RH .
PHYSICAL REVIEW LETTERS, 1988, 61 (06) :726-729
[9]  
BUSCHVISHNIAC JI, 1998, ELECTROMECHANICAL SE
[10]   Measurement of nanomechanical resonant structures in single-crystal silicon [J].
Carr, DW ;
Sekaric, L ;
Craighead, HG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3821-3824