The microstructure of sigma 1140 + SiC fibres

被引:61
作者
Cheng, TT
Jones, IP
Shatwell, RA
Doorbar, P
机构
[1] Univ Birmingham, IRC Mat High Performance Applicat, Birmingham B15 2TT, W Midlands, England
[2] Univ Birmingham, Sch Met & Mat, Birmingham B15 2TT, W Midlands, England
[3] DERA, Struct Mat Ctr, Farnborough, Hants, England
[4] Rolls Royce PLC, Derby DE24 8BJ, England
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1999年 / 260卷 / 1-2期
关键词
transmission electron microscopy; As-received; reaction zone; morphology;
D O I
10.1016/S0921-5093(98)00973-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Transmission electron microscopy (TEM) studies have been carried out on 'as-received' SM1140 (+) SiC fibres grown by CVD onto W wire cores. The transition between the W core and the SIC deposit is not abrupt in that there is a reaction zone present at the interface which actually consists of a silicide layer and a carbide layer. The SiC is subdivided into four concentric layers across the fibre diameter, each with a different morphology. The possible causes for the differences in the SiC morphology are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:139 / 145
页数:7
相关论文
共 12 条
[1]   DEPLETION EFFECTS OF SILICON-CARBIDE DEPOSITION FROM METHYLTRICHLOROSILANE [J].
BESMANN, TM ;
SHELDON, BW ;
MOSS, TS ;
KASTER, MD .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (10) :2899-2903
[2]   MODEL FOR THE FORMATION OF SILICON-CARBIDE FROM THE PYROLYSIS OF DICHLORODIMETHYLSILANE IN HYDROGEN .1. SILICON FORMATION FROM CHLOROSILANES [J].
CAGLIOSTRO, DE ;
RICCITIELLO, SR .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1993, 76 (01) :39-48
[3]  
Cheng TT, 1996, MICROSC RES TECHNIQ, V33, P293, DOI 10.1002/(SICI)1097-0029(19960215)33:3<293::AID-JEMT8>3.0.CO
[4]  
2-R
[5]   MICROSTRUCTURAL OBSERVATIONS OF METAL POWDERS USING ANALYTICAL ELECTRON-MICROSCOPY [J].
FIELD, RD ;
FRASER, HL .
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1978, 9 (01) :131-134
[6]   In situ optical analysis of the gas phase during the deposition of silicon carbide from methyltrichlorosilane [J].
Ganz, M ;
Dorval, N ;
Lefebvre, M ;
Pealat, M ;
Loumagne, F ;
Langlais, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (05) :1654-1661
[7]  
Grant P, 1997, MATER WORLD, V5, P77
[8]   A study of the transition between growth of stoichiometric and silicon-excess silicon carbide by CVD in the system MTS/H-2 [J].
Josiek, A ;
Langlais, F ;
Bourrat, X .
CHEMICAL VAPOR DEPOSITION, 1996, 2 (01) :17-21
[9]   THE MICROSTRUCTURE OF SCS-6 SIC FIBER [J].
NING, XJ ;
PIROUZ, P .
JOURNAL OF MATERIALS RESEARCH, 1991, 6 (10) :2234-2248
[10]   THE STRUCTURE OF CARBON IN CHEMICALLY VAPOR-DEPOSITED SIC MONOFILAMENTS [J].
NING, XJ ;
PIROUZ, P ;
LAGERLOF, KPD ;
DICARLO, J .
JOURNAL OF MATERIALS RESEARCH, 1990, 5 (12) :2865-2876