Metal-semiconductor-metal photodiodes based on CVD diamond films

被引：16

作者：

Salvatori, S ^{[1
]}

Vincenzoni, R ^{[1
]}

Rossi, MC ^{[1
]}

Galluzzi, F ^{[1
]}

Pinzari, F ^{[1
]}

Cappelli, E ^{[1
]}

Ascarelli, P ^{[1
]}

机构：

[1] CNR,IMAI,I-00016 MONTEROTONDO S,ITALY

来源：

关键词：

diamond; metal-semiconductor junction; photodiodes;

D O I：

10.1016/0925-9635(95)00433-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a study on diamond-based UV photodetectors with lateral metal-semiconductor-metal configuration having the gap between Al electrodes of about 5 mu m, similar to the average grain size in diamond films. Using a simple model for the photocurrent collection, mobility-lifetime values of diamond layers are derived and compared with available transport data. The spectral response of these devices is also measured from 1 to about 7 eV, showing the presence of internal photoemission processes in the near infrared region, the existence of localized transitions in the visible and the occurrence of interband transitions above 5 eV, responsible for a large UV photoresponse.

引用

页码：775 / 778

页数：4

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