Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices

被引：182

作者：

Chou, Ying-Hsuan ^{[1
]}

Chang, Hsuan-Chun ^{[1
]}

Liu, Cheng-Liang ^{[2
]}

Chen, Wen-Chang ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan

[2] Natl Cent Univ, Dept Chem & Mat Engn, Taoyuan 32001, Taiwan

来源：

POLYMER CHEMISTRY | 2015年 / 6卷 / 03期

关键词：

POLYIMIDE ELECTRETS; GATE ELECTRET; BLENDS;

D O I：

10.1039/c4py01213e

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

In this review, we present the effects of the chemical structure and composition of polymer or composite electrets on tuning the memory characteristics of the non-volatile organic field effect transistor (OFET) memory devices, including surface polarity, pi-conjugation length, architecture, donor-acceptor strength, and interface energy barrier. The recent progress in developing polymer-based charge storage electrets is highlighted in order to provide insights into understanding the operation mechanism and the molecular design-memory properties relationship, as well as improving the overall performance of OFET memory devices.

引用

页码：341 / 352

页数：12

共 37 条

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