Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C61 Butyric Acid Methyl Ester Composite Films

被引：37

作者：

Baeg, Kang-Jun ^{[1
]}

Khim, Dongyoon ^{[1
]}

Kim, Dong-Yu

Jung, Soon-Won ^{[2
]}

Koo, Jae Bon ^{[2
]}

Noh, Yong-Young ^{[2
,3
]}

机构：

[1] GIST, Dept Mat Sci & Engn, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

[2] Elect & Telecommun Res Inst, Convergence Components & Mat Lab, Taejon 305350, South Korea

[3] Hanbat Natl Univ, Dept Chem Engn, Taejon 305719, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; NONVOLATILE MEMORY; ELECTRET;

D O I：

10.1143/JJAP.49.05EB01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we report on a pentacene-based, nonvolatile transistor memory device with poly(4-vinyl phenol) (PVP):[6,6]-phenyl-C-61 butyric acid methyl ester (PCBM) nano-composite films as the charge storage site. Incorporation of PCBM molecules into PVP dielectric materials as charge storage sites for electrons resulted in a reversible shift in the threshold voltage (V-Th) and reliable memory characteristics. The characteristics of the pentacene memory device were as follows: a relatively high field-effect mobility (mu(FET)) (0.2-0.3 cm(2) V-1 s(-1)) with a large memory window (ca. 20 V), a high on/off ratio (similar to 10(4)) during writing and erasing with application of an operating gate voltage of 60 V for a short duration time (similar to 1 ms), and a retention time of about 40 h. (C) 2010 The Japan Society of Applied Physics

引用

页码：05EB011 / 05EB015

页数：5

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