Semiconductor electronics - Trapped fast at the gate

被引：31

作者：

Gelinck, Gerwin ^{[1
]}

机构：

[1] TNO, Netherlands Org Appl Sci Res, Holst Ctr, NL-5656 AE Eindhoven, Netherlands

来源：

NATURE | 2007年 / 445卷 / 7125期

关键词：

D O I：

10.1038/445268a

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The speed record for programming organic transistor memory has been shattered. Work is needed on the stability of the memory storage, but it's a promising step towards some novel technological applications.

引用

页码：268 / 270

页数：3

共 7 条

[1] Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret [J].

Baeg, Kang-Jun ;

Noh, Yong-Young ;

Ghim, Jieun ;

Kang, Seok-Ju ;

Lee, Hyemi ;

Kim, Dong-Yu .

ADVANCED MATERIALS, 2006, 18 (23) :3179-+

[2] General observation of n-type field-effect behaviour in organic semiconductors [J].

Chua, LL ;

Zaumseil, J ;

Chang, JF ;

Ou, ECW ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

NATURE, 2005, 434 (7030) :194-199

[3]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[4]

2-9

[5] Organic field-effect transistors with polarizable gate insulators [J].

Katz, HE ;

Hong, XM ;

Dodabalapur, A ;

Sarpeshkar, R .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) :1572-1576

[6] Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport [J].

Knipp, D ;

Street, RA ;

Völkel, A ;

Ho, J .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :347-355

[7] Nonvolatile organic field-effect transistor memory element with a polymeric gate electret [J].

Singh, TB ;

Marjanovic, N ;

Matt, GJ ;

Sariciftci, NS ;

Schwödiauer, R ;

Bauer, S .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5409-5411

← 1 →