Optimization of power diode characteristics by means of ion irradiation

被引：41

作者：

Vobecky, J ^{[1
]}

Hazdra, P ^{[1
]}

Homola, J ^{[1
]}

机构：

[1] POLOVODICE INC, PRAGUE, CZECH REPUBLIC

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 12期

关键词：

D O I：

10.1109/16.544422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The static and dynamic parameters of bipolar power diode are optimized by the use of helium irradiation. The optimal position for the defect peak caused by the irradiation was found in the n-base very close to the anode junction, This was verified by both the simulation and the experiment.

引用

页码：2283 / 2289

页数：7

共 7 条

[1] SIMULATION OF PROTON-INDUCED LOCAL LIFETIME REDUCTION IN 10 KV DIODES [J].