SIMULATION OF PROTON-INDUCED LOCAL LIFETIME REDUCTION IN 10 KV DIODES

被引：3

作者：

BRAMMER, R

HALLEN, A

HAKANSSON, J

机构：

[1] ABB DR,S-72175 VASTERAS,SWEDEN

[2] ABB CORP RES,S-72178 VASTERAS,SWEDEN

[3] UNIV UPPSALA,DEPT RADIAT SCI,S-75121 UPPSALA,SWEDEN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

关键词：

D O I：

10.1109/16.239846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the results of simulation of localized charge carrier lifetime reductions in 10 kV power diodes. These results are compared to experiments with proton irradiation as means for local lifetime reductions. It is shown that also the range straggling inherent in the irradiation process must be taken into account in the simulations.

引用

页码：2089 / 2091

页数：3

共 12 条

[1] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].