Ensemble Monte Carlo/molecular dynamics simulation of gate remote charge effects in small geometry MOSFETs

被引：9

作者：

Kawashima, I ^{[1
]}

Kamakura, Y ^{[1
]}

Taniguchi, K ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect & Informat Syst, Suita, Osaka 5650871, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an ensemble Monte Carlo simulation coupled with molecular dynamics method to analyze the point charge effects in small MOSFETs characteristic. The carrier mobility in MOSFETs with ultra-thin gate dielectrics is analyzed taking account of the effect of the ionized impurities in the gate electrode through the remote charge scattering. The less significant mobility degradation is observed in MOSFETs with high-k gate dielectric compared with the same effective thickness SiO2 film.

引用

页码：113 / 116

页数：4

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