Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides

被引：63

作者：

Yang, N ^{[1
]}

Henson, WK

Hauser, JR

Wortman, JJ

机构：

[1] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 02期

基金：

美国国家科学基金会;

关键词：

dielectric films; inversion layers; mobility; MOS devices; oxidation; quantization; scattering;

D O I：

10.1109/16.822292

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of remote charge scattering on the electron mobility of n-MOSFET's with ultrathin gate oxides from 1.5 nm to 3.2 nm have been estimated, By calculating the scattering rate of the two-dimensional (2-D) electron gas at the Si/silicon dioxide interface due to the ionized doping impurities at the poly-Si/silicon dioxide interface, the remote charge scattering mobility has been calculated. Electron mobility measured from the n-MOSFET's with ultrathin gate oxides has been used to extract several known mobility components. These mobility components have been compared to the calculated remote charge scattering mobility. From these comparisons, it is clear that the overall electron mobility is not severely degraded by remote charge scattering for the oxide thickness studied.

引用

页码：440 / 447

页数：8

共 27 条

[1] Thin oxides with in situ native oxide removal [J].