Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8 nm thick gate oxides for scaled MOSFETs

被引：21

作者：

Koh, M ^{[1
]}

Iwamoto, K ^{[1
]}

Mizubayashi, W ^{[1
]}

Murakami, H ^{[1
]}

Ono, T ^{[1
]}

Tsuno, M ^{[1
]}

Mihara, T ^{[1
]}

Shibahara, K ^{[1
]}

Yokoyama, S ^{[1
]}

Miyazaki, S ^{[1
]}

Miura, MM ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Tokyo 1690051, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Influences of direct tunnel leakage current through 1.2-2.8 nm thick gate oxides on nMOSFET DC characteristics have been investigated. It is found that the statistical distribution of the direct tunnel leakage current through the ultrathin gate oxides induces significant fluctuations in the threshold voltage and the transconductance of MOSFETs when the gate oxide tunnel resistance becomes comparable to gate poly-Si resistance. By calculating based on the measured characteristics it is shown that the threshold voltage and the transconductance fluctuations will be problematic when the gate oxide thickness is scaled down to less than 1 nm.

引用

页码：919 / 922

页数：4

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