Structure, morphology and optical properties of CuInS2 thin films prepared by modulated flux deposition

被引：27

作者：

Guillén, C

Herrero, J

Gutiérrez, MT

Briones, F

机构：

[1] CIEMAT, Dep Energias Renovables, E-28040 Madrid, Spain

[2] CSIC, CNM, Inst Microelect, Madrid 28760, Spain

来源：

THIN SOLID FILMS | 2005年 / 480卷

关键词：

CuInS2; structure; morphology; optical properties;

D O I：

10.1016/j.tsf.2004.11.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure, morphology and optical properties of copper indium sulfide thin films prepared by a novel modulated flux deposition procedure have been investigated for layers from 200 to 400 mn thickness. These polycrystalline CuInS2 films grown onto glass substrates showed CuAu-like structure, similar to epitaxial CuInS2 films grown onto monocrystalline substrates, and direct band gap values Eg=1.521.55 eV, optimum for single-junction photovoltaic applications. The increase in the layer thickness leads to growth of the average crystallite size and increases slightly the surface roughness and the absorption coefficient. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：19 / 23

页数：5

共 19 条

[1] Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2 -: art. no. 075203 [J].