Tailoring growth conditions for modulated flux deposition of In2S3 thin films

被引：42

作者：

Guillén, C

García, T

Herrero, J

Gutiérrez, MT

Briones, F

机构：

[1] CIEMAT, Dept Energias Renovables, Madrid 28040, Spain

[2] Inst Microelect Madrid, Madrid 28760, Spain

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

In2S3; thin films; photovoltaics;

D O I：

10.1016/j.tsf.2003.10.144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium sulfide thin films have been prepared by a novel modulated flux deposition procedure. Experimental parameters have been adjusted in order to obtain a high band gap and low absorption material at low deposition temperature, as required for photovoltaic applications. All samples showed tetragonal beta-In2S3 structure with random or preferential (103) plane orientation, depending mainly on the sulfur availability during the growth process. The sulfur availability has been optimized to achieve smooth surfaces and low scattering/absorption in the films. The average crystallite size decreased and the energy gap increased as the layer thickness decreased from 250 to 60 nm. Energy gap values as large as 3.02 eV have been obtained for the thinnest In2S3 films. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：112 / 115

页数：4

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