ZnO MSM photodetectors with Ru contact electrodes

被引：74

作者：

Lin, TK

Chang, SJ ^{[1
]}

Su, YK

Huang, BR

Fujita, M

Horikoshi, Y

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan

[4] Waseda Univ, Dept Elect Engn & Biosci, Tokyo 1698555, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 2-4期

关键词：

MBE; ruthenium; ZnO; MSM photodetector; Schottky diode;

D O I：

10.1016/j.jcrysgro.2005.04.056

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：513 / 517

页数：5

共 18 条

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