High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts

被引：56

作者：

Feng, Jia ^{[1
]}

Thareja, Gaurav ^{[1
]}

Kobayashi, Masaharu ^{[1
]}

Chen, Shulu ^{[1
]}

Poon, Andrew ^{[1
]}

Bai, Yuri ^{[1
]}

Griffin, Peter B. ^{[1
]}

Wong, Simon S. ^{[1
]}

Nishi, Yoshio ^{[1
]}

Plummer, James D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期

关键词：

gate-all-around (GAA); germanium-on-insulator (GeOI); MOSFET; rapid melt growth (RMG);

D O I：

10.1109/LED.2008.2000613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface, Al2O3 high-k gate dielectric, and self-aligned NiGe contacts. The subthreshold swing is 71 mV/dec, which is better than those of the bulk and nanowire Ge p-MOSFETs reported to date. Planar GeOI p-MOSFET arrays show 40% hole mobility enhancement at a high effective field, which is as good as bulk Ge devices.

引用

页码：805 / 807

页数：3

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