P-channel germanium FinFET based on rapid melt growth

被引：72

作者：

Feng, Jia ^{[1
]}

Woo, Raymond

Chen, Shulu

Liu, Yaocheng

Griffin, Peter B.

Plummer, James D.

机构：

[1] IBM Corp, Semicond R&D Ctr, Hopewell Jct, NY 12533 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 07期

关键词：

FinFET; germanium; germanium-on-insulator (GeOI); rapid melt growth (RMG);

D O I：

10.1109/LED.2007.899329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance P-channel Ge FinFETs have been fabricated based on the rapid-melt-growth method. The fully depleted Ge FinFET has an OFF-state drain leakage current that is two orders of magnitude lower than the partially depleted one. The channel on the {110} surfaces provides an enhancement of the effective hole mobility of 60% and 28% at an effective field of 0.4 NIV/cm compared with, respectively, silicon universal hole mobility and our previous work with {100} Ge-on-insulator pMOSFETs.

引用

页码：637 / 639

页数：3

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