Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate

被引：60

作者：

Feng, Jia ^{[1
]}

Liu, Yaocheng

Griffin, Peter. B.

Plummer, James D.

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 11期

关键词：

germanium-on-insulator (GeOI); heterogeneous integration; monolithic integration; MOSFET;

D O I：

10.1109/LED.2006.883286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The monolithic integration of germanium-on-insulator (GeOI) p-MOSFETs with silicon n-MOSFETs on a silicon substrate is demonstrated. The GeOI p-MOSFETs are fabricated on the oxide for silicon device isolation based on the newly developed rapid-melt-growth method. CMOS inverters consisting of the silicon n-MOSFET and GeOI p-MOSFET were obtained, and the measured results show that the processing of high-performance GeOI devices is compatible with bulk-silicon technology.

引用

页码：911 / 913

页数：3

共 10 条

[1] Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate [J].

Bai, WP ;

Lu, N ;

Ritenour, A ;

Lee, ML ;

Antoniadis, DA ;

Kwong, DL .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (03) :175-178

[2]

Chen HY, 2005, 2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P16

[3]

Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872

[4]

HUANG CH, 2003, VLSI S, P119

[5]

LIU Y, 2005, THESIS STANFORD U ST

[6]

Liu YC, 2004, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, P1001

[7] High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates [J].

Liu, YC ;

Deal, MD ;

Plummer, JD .

APPLIED PHYSICS LETTERS, 2004, 84 (14) :2563-2565

[8]

RANSOM CM, 1991, P 49 ANN DEV RES C B, P4

[9] Electrical characterization of germanium p-channel MOSFETs [J].

Shang, H ;

Okorn-Schimdt, H ;

Ott, J ;

Kozlowski, P ;

Steen, S ;

Jones, EC ;

Wong, HSP ;

Hanesch, W .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) :242-244

[10] Three-dimensional metal gate-high-κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devices [J].

Yu, DS ;

Chin, A ;

Liao, CC ;

Lee, CF ;

Cheng, CF ;

Li, MF ;

Yoo, WJ ;

McAlister, SP .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (02) :118-120

← 1 →