Spin accumulation in a quantum cluster resolved in tunnel junctions

被引：10

作者：

Brataas, A ^{[1
]}

Hirano, M

Inoue, J

Nazarov, YV

Bauer, GEW

机构：

[1] Harvard Univ, Lyman Lab Phys, Cambridge, MA 02138 USA

[2] Nagoya Univ, Dept Appl Phys, Chikusa Ku, Nagoya, Aichi 46401, Japan

[3] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 4A期

关键词：

ferromagnetic tunnel junction; magnetoresistance; Coulomb blockade; spin accumulation;

D O I：

10.1143/JJAP.40.2329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transport through a small metal island attached to two ferromagnetic reservoirs by tunnel junctions is considered. The discrete energy levels due to size quantization, the Coulomb charging energy and the non-equilibrium spin accumulation due to the spin-dependent tunneling rates are taken into account. Analytical results for the zero-bias conductance and magnetoresistance are found. In the nonlinear current-voltage regime, numerical calculations reveal discrete jumps in the tunnel magnetoresistance when the applied voltage is in resonance with the energy difference associated with tunneling of an electron into the ground or excited states of the quantum cluster, Effects of spin-dependent discrete energy levels in magnetic quantum clusters on the tunnel magnetoresistance are studied in detail.

引用

页码：2329 / 2335

页数：7

共 24 条

[1] Effects of spin accumulation on single-electron tunneling in a double ferromagnetic microjunction [J].