The effect of diffusion on formation of self-assembled CdSe quantum dots

被引：6

作者：

Yang, Y

Shen, DZ

Zhang, JY

Fan, XW

Zhen, ZH

Zhao, XW

Zhao, DX

Liu, YN

机构：

[1] Chinese Acad Sci, Changchun Inst Opt, Lab Excited State Proc, Changchun 130021, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt, State Key Lab Appl Opt, Changchun 130022, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 225卷 / 2-4期

关键词：

atomic force microscopy; diffusion; low dimensional structures; metalorganic chemical vapor deposition; cadmium compounds; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(01)00910-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of diffusion on formation of self-assembled CdSe quantum dots (SAQDs) was studied in this paper. Two kinds of diffusion were observed during the growth of CdSe layer. Surface diffusion was confirmed by atomic force microscopy (AFM). Interdiffusion was verified by the photoluminescence (PL) and X-ray diffraction measurement. The surface diffusion might help to form quantum dots. However, the interdiffusion could prevent the formation of quantum dots. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：431 / 434

页数：4

共 11 条

[1] Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots [J].