Nanometer scale surface clustering on ZnSe epilayers

被引：47

作者：

Smathers, JB ^{[1
]}

Kneedler, E ^{[1
]}

Bennett, BR ^{[1
]}

Jonker, BT ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.121025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used atomic force microscopy to investigate the surface morphology of ZnSe films grown on GaAs(001) by molecular beam epitaxy. We report the observation of nanometer scale surface clusters 400-1200 Angstrom in diameter and 60-200 Angstrom in height. The clusters form ex situ as the result of the initial exposure of the ZnSe to atmosphere, and undergo Ostwald ripening at room temperature. Our observations, combined with the relevant literature, suggest that the cluster composition is SeO2. We propose that the oxidation of the ZnSe epilayers produces a thin layer of SeO2 which migrates to form surface clusters on a stable, zinc-related oxide surface. These findings should facilitate greater control of surface morphologies during ZnSe based device fabrication processes. [S0003-6951(98)02610-2].

引用

页码：1238 / 1240

页数：3

共 21 条

[1]

[Anonymous], SITZUNGSBER AK 2B MN

[2] Self-organized CdSe quantum dots on (100)ZnSe/GaAs surfaces grown by metalorganic molecular beam epitaxy [J].