Self-organized growth, ripening, and optical properties of wide-bandgap II-VI quantum dots

被引：68

作者：

Merz, JL

Lee, S

Furdyna, JK ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

II-VI semiconductors; self-assembling; quantum dots; ripening; AFM; photoluminescence;

D O I：

10.1016/S0022-0248(97)00680-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We discuss the formation of self-assembling II-VI quantum dots during MBE growth, with emphasis on CdSe dots grown on ZnSe. AFM measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 35 +/- 5 nm. Uncapped CdSe dots are unstable with time, showing clear evidence of ripening. Photoluminescence from capped dots indicates strong exciton localization, as evidenced by very intense PL emission even at relatively high temperatures. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：228 / 236

页数：9

共 26 条

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