Spin-Cast and Patterned Organophosphonate Self-Assembled Monolayer Dielectrics on Metal-Oxide-Activated Si

被引:66
作者
Acton, Orb [1 ]
Hutchins, Daniel [1 ]
Arnadottir, Liney [2 ,3 ]
Weidner, Tobias [2 ,3 ]
Cernetic, Nathan [1 ]
Ting, Guy G. [4 ]
Kim, Tae-Wook [1 ]
Castner, David G. [2 ,3 ]
Ma, Hong [1 ]
Jen, Alex K. -Y. [1 ,4 ]
机构
[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
[2] Univ Washington, Natl ESCA & Surface Anal Ctr Biomed Problems, Dept Bioengn, Seattle, WA 98195 USA
[3] Univ Washington, Natl ESCA & Surface Anal Ctr Biomed Problems, Dept Chem Engn, Seattle, WA 98195 USA
[4] Univ Washington, Dept Chem, Seattle, WA 98195 USA
关键词
VOLTAGE ORGANIC TRANSISTORS; THIN-FILM TRANSISTORS; PHOSPHONIC ACID; COMPLEMENTARY CIRCUITS; SURFACE; ELECTRONICS; ALUMINUM; INTERFACE; SILICON;
D O I
10.1002/adma.201004762
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An efficient process is developed for modifying Si with self-assembled monolayers (SAMs) through in situ metal oxide surface activation and microcontact printing or spin-coating of phosphonic-acid-based molecules. The utility of this process is demonstrated by fabricating self-organized and solution-processed low-voltage organic thin-film transistors enabled by patterned and spincast phosphonate SAM/metal oxide hybrid dielectrics.
引用
收藏
页码:1899 / +
页数:5
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