Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses

被引：583

作者：

Borowiec, A ^{[1
]}

Haugen, HK

机构：

[1] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4M1, Canada

[3] McMaster Univ, CEMD, Hamilton, ON L8S 4M1, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1586457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-spatial-frequency periodic structures on the surfaces of InP, GaP, and GaAs have been observed after multiple-pulse femtosecond laser irradiation at wavelengths in the transparency regions of the respective solids. The periods of the structures are substantially shorter than the wavelengths of the incident laser fields in the bulk materials. In contrast, high-frequency structures were not observed for laser photon energies above the band gaps of the target materials. (C) 2003 American Institute of Physics.

引用

页码：4462 / 4464

页数：3

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