Plasma deposition of amorphous silicon alloys from fluorinated gases

被引：16

作者：

Cicala, G

Bruno, G

Capezzuto, P

机构：

[1] Ctro. Stud. per la Chim. dei Plasmi, C.N.R. Dipartimento di Chimica, Università di Bari, 173-70126 Bari, Via G. Amendola

来源：

PURE AND APPLIED CHEMISTRY | 1996年 / 68卷 / 05期

关键词：

D O I：

10.1351/pac199668051143

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Plasma deposition of a-SiGe, a-SiC and a-SiN alloys starting from fluorinated precursors is overviewed. The growth chemistries are examined on the basis of a unique chemisorption model. Some aspects on the role of F atoms in controlling the gas surface interactions and in determining the material properties are also evidenced.

引用

页码：1143 / 1149

页数：7

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