DEPOSITION OF SILICON FILMS FROM SICL4 GLOW-DISCHARGES - A KINETIC-MODEL OF THE SURFACE PROCESS

被引：24

作者：

BRUNO, G

CAPEZZUTO, P

CICALA, G

CRAMAROSSA, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2050 / 2056

页数：7

共 18 条

[1] MECHANISM OF SILICON FILM DEPOSITION IN THE RF PLASMA REDUCTION OF SILICON TETRACHLORIDE [J].

BRUNO, G ;

CAPEZZUTO, P ;

CICALA, G ;

CRAMAROSSA, F .

PLASMA CHEMISTRY AND PLASMA PROCESSING, 1986, 6 (02) :109-125

[2] THE INFLUENCE OF ARGON ADDITION ON THE DEPOSITION AND PROPERTIES OF SI H, CL FILMS PREPARED IN A GLOW-DISCHARGE [J].

BRUNO, G ;

CAPEZZUTO, P ;

CICALA, G ;

CRAMAROSSA, F .

THIN SOLID FILMS, 1986, 135 (02) :245-250

[3] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].

COBURN, JW ;

CHEN, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136

[4]

d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839

[5]

HANASAKI T, 1981, JPN J APPL PHYS, V20, P281

[6] STRUCTURAL AND SOME OTHER PROPERTIES OF SILICON DEPOSITED IN AN SICL4-H2 RF DISCHARGE [J].

IQBAL, Z ;

CAPEZZUTO, P ;

BRAUN, M ;

OSWALD, HR ;

VEPREK, S ;

BRUNO, G ;

CRAMAROSSA, F ;

STUSSI, H ;

BRUNNER, J ;

SCHARLI, M .

THIN SOLID FILMS, 1982, 87 (01) :43-51

[7] DETECTION OF SIH2 IN SILANE AND DISILANE GLOW-DISCHARGES BY FREQUENCY-MODULATION ABSORPTION-SPECTROSCOPY [J].

JASINSKI, JM ;

WHITTAKER, EA ;

BJORKLUND, GC ;

DREYFUS, RW ;

ESTES, RD ;

WALKUP, RE .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1155-1157

[8] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS [J].

KNIGHTS, JC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :159-170

[9]

LAIDLER KJ, 1954, CATALYSIS 1, V1

[10]

Manory R., 1983, Plasma Chemistry and Plasma Processing, V3, P235, DOI 10.1007/BF00566022

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