DEPOSITION OF SILICON-GERMANIUM ALLOYS UNDER PLASMA MODULATION CONDITIONS

被引:4
作者
BRUNO, G [1 ]
CAPEZZUTO, P [1 ]
LOSURDO, M [1 ]
MANODORO, P [1 ]
CICALA, G [1 ]
机构
[1] CNR,DIPARTMENTO OPHTHALMOL,I-70126 BARI,ITALY
关键词
D O I
10.1016/S0022-3093(05)80230-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Plasma deposition of a-Si,Ge:H,F films from SiF4-GeH4-H2 mixture, has been investigated by applying a square wave modulation to the r.f. field. The effects of plasma modulation on the thickness and compositional uniformity and on the increase of Ge and H incorporation in the film are reported. A two-phases model for the conduction mechanism is preliminarily discussed.
引用
收藏
页码:753 / 756
页数:4
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