Mechanism of enhanced formation of C54-TiSi2 in high-temperature deposited Ti thin films on preamorphized, (001)Si

被引：44

作者：

Chang, SM ^{[1
]}

Huang, HY ^{[1
]}

Yang, HY ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.123300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhanced formation of C54-TiSi2 in high-temperature deposited Ti thin films on preamorphized (001)Si has been investigated by high-resolution transmission electron microscopy in conjunction with autocorrelation function analysis. The increase in the thickness of the amorphous TiSix layer is due to the preamorphization implantation for the most part. The dominant effect of high-temperature sputtering is to increase the density of crystallites in the amorphous TiSix layer. The enhanced formation of C54-TiSi2 in high-temperature deposited samples is attributed to the more extensive presence of silicide crystallites, which serve as nucleation sites, in the amorphous TiSix layer than that in samples deposited at room temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)04302-8].

引用

页码：224 / 226

页数：3

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