Vanadyl precursors used to modify the properties of vanadium oxide thin films obtained by chemical vapor deposition

Vanadium oxide thin films were prepared by chemical vapor deposition using as precursors a series of vanadyl complexes of general formula VO(L)(2)(H), where L is a beta-diketonate ligand. The depositions were carried out on alpha-Al2O3 subtrates in O-2, N-2, and N-2 + H2O atmospheres. In order to elucidate the role played by different ligands and synthesis conditions on the properties of the obtained films, the chemical composition of the samples was investigated by X-ray photoelectron spectroscopy, while their microstructure and surface morphology were analyzed by X-ray diffraction, Raman and atomic force microscopy. The thermal decomposition of the precursors, with particular attention to their reactivity in the presence of water vapor, was studied by mass spectrometry and Fourier transform infrared spectroscopy. (C) 1999 The Electrochemical Society. S0013-4651(97)12-091-2. All rights reserved.