Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors

被引：134

作者：

Chiang, Hai Q. ^{[1
]}

McFarlane, Brian R. ^{[1
]}

Hong, David ^{[1
]}

Presley, Rick E. ^{[1
]}

Wager, John F. ^{[1
]}

机构：

[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期

基金：

美国国家科学基金会;

关键词：

amorphous semiconductors; thin-film transistors;

D O I：

10.1016/j.jnoncrysol.2007.10.105

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous oxide semiconductors are attracting much attention due to their high electron mobility even when processed at low temperatures. One such material is indium gallium zinc oxide (IGZO). At a temperature of 175 degrees C, an IGZO thin-film transistor (TFT) is demonstrated to exhibit an incremental channel mobility (mu(inc)) of similar to 17 cm(2) V-1 s(-1) and a turn-on voltage (V-on) of similar to 1 V. Given this performance, IGZO seems well-suited for TFT applications. We report on how decreasing oxygen partial pressure and increasing RF power during the sputtering deposition decreases V-on towards 0 V and increases mobility. Two types of stability, constant bias testing conditions and idle shelf life, are explored and it is found that stress test stability is closely correlated to the initial value of V-on, with an initial V-on of 0 V resulting in improved stability. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2826 / 2830

页数：5

共 10 条

[1]

CHIANG HQ, 2007, DEV OXIDE SEMICONDUC

[2] ZnO-channel thin-film transistors: Channel mobility [J].

Hoffman, RL .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5813-5819

[3] Modeling and simulation of polycrystalline ZnO thin-film transistors [J].

Hossain, FM ;

Nishii, J ;

Takagi, S ;

Ohtomo, A ;

Fukumura, T ;

Fujioka, H ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) :7768-7777

[4] Electronic structures and device applications of transparent oxide semiconductors: What is the real merit of oxide semiconductors? [J].

Kamiya, T ;

Hosono, H ;

Kamiya, T ;

Hosono, H ;

Hosono, H .

INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, 2005, 2 (04) :285-294

[5] Electrical and optical properties of transparent conducting homologous compounds in the indium-gallium-zinc oxide system [J].

Moriga, Toshihiro ;

Kammler, Daniel R. ;

Mason, Thomas O. ;

Palmer, George B. ;

Poeppelmeier, Kenneth R. .

1999, American Ceramic Soc, Westerville (82)

[6] Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor [J].

Nomura, K ;

Ohta, H ;

Ueda, K ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

SCIENCE, 2003, 300 (5623) :1269-1272

[7] Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O:: Experiment and ab initio calculations [J].

Nomura, Kenji ;

Kamiya, Toshio ;

Ohta, Hiromichi ;

Uruga, Tomoya ;

Hirano, Masahiro ;

Hosono, Hideo .

PHYSICAL REVIEW B, 2007, 75 (03)

[8] Mechanism of electrical conductivity of transparent InGaZnO4 [J].

Orita, M ;

Tanji, H ;

Mizuno, M ;

Adachi, H ;

Tanaka, I .

PHYSICAL REVIEW B, 2000, 61 (03) :1811-1816

[9] Influences of sputtering power and substrate temperature on the properties of RF magnetron sputtered indium tin oxide thin films [J].

Terzini, E ;

Nobile, G ;

Loreti, S ;

Minarini, C ;

Polichetti, T ;

Thilakan, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6A) :3448-3452

[10] High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J].

Yabuta, Hisato ;

Sano, Masafumi ;

Abe, Katsumi ;

Aiba, Toshiaki ;

Den, Tohru ;

Kumomi, Hideya ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

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