Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide

Stability has been investigated for short-channel hydrogenated n-channel polycrystalline thin-film transistors (poly-Si TFT's) with very thin (12 nm) electron cyclotron resonance (ECR) N2O-plasma gate oxide. The TFT's show negligible changes in the electrical characteristics after hot-carrier stresses, which is due to the highly reliable interface and gate oxide, The hydrogenated TFT's with 3-mu m gate length TFT's exhibit very small degradation (Delta V-th < 15 mV) under hot-carrier stresses and Fowler-Nordheim (F-N) stress (Delta V-th = 61 mV, Delta Gm/Gm = 2.2%, Delta S/S = 4.7%).