Plasma-induced deposition of titanium nitride from TiCl4 in a direct current glow discharge: Control of the chlorine content and gas-phase nucleation

Titanium nitride thin films have been deposited from TiCl4, N-2, and H-2 in a low-pressure glow discharge at temperatures of less than or equal to 500 degrees C, which are compatible with most applications. Based on our earlier work on the effect of the plasma parameters on the chemical pseudoequilibrium in this and in similar systems, the chlorine content could be reduced to less than 2 at %. Suppression of the positive column reduced the gas-phase reaction within the reactor volume and the concomitant homogeneous nucleation. Dense, very hard films with golden color could be deposited on various substrates including silicon and steel.