Structural and compositional dependences of the Schottky barrier in Al/Ga1-xAlxAs(100) and (110) junctions

被引：19

作者：

Bardi, J ^{[1
]}

Binggeli, N ^{[1
]}

Baldereschi, A ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.59.8054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on nb initio pseudopotential calculations, we have examined the equilibrium atomic geometries and electronic structure of chemically abrupt epitaxial AlGaAs and Al/Ga1-xAlxAs(100) and (110) interfaces. In particular, we investigated the change in the corresponding Schottky barrier height for different interface atomic geometries and semiconductor alloy compositions. Our results indicate that different epitaxial geometries and orientations of the interface can change the absolute value of the Schottky barrier by as much as 0.4 eV. However, for a given equilibrium geometry of the interface, Al/Ga1-xAlxAs(100) and (110) junctions exhibit compellingly similar barrier variations with alloy composition, which amount to the GaAs/Ga1-xAlxAs band offset. The observed trend is explained on the atomic scale using a linear-rasponse-theory approach. [S0163-1829(99)07811-X].

引用

页码：8054 / 8064

页数：11

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