FERMI-LEVEL MOVEMENT AND ATOMIC GEOMETRY AT THE AL/GAAS(001) INTERFACE

[1] ON THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT AND INTERFACE STATES UPON INITIAL SEMICONDUCTOR SURFACE PARAMETERS IN GAAS (001)/AL JUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 819 - 824

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[3] CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2431 - 2446

[4] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263

[5] DOPANT INCORPORATION, FERMI-LEVEL MOVEMENT, AND BAND OFFSET AT THE GE/GAAS(001) INTERFACE [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7858 - 7861

[6] SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2) [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 6605 - 6611

[7] EPITAXIAL-GROWTH AND BAND BENDING OF N-TYPE AND P-TYPE GE ON GAAS(001) [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7484 - 7492

[8] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[9] FADLEY CS, 1984, PROGR SURFACE SCI, V16, P327

[10] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[1] ON THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT AND INTERFACE STATES UPON INITIAL SEMICONDUCTOR SURFACE PARAMETERS IN GAAS (001)/AL JUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 819 - 824

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[3] CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2431 - 2446

[4] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263

[5] DOPANT INCORPORATION, FERMI-LEVEL MOVEMENT, AND BAND OFFSET AT THE GE/GAAS(001) INTERFACE [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7858 - 7861

[6] SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2) [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 6605 - 6611

[7] EPITAXIAL-GROWTH AND BAND BENDING OF N-TYPE AND P-TYPE GE ON GAAS(001) [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7484 - 7492

[8] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[9] FADLEY CS, 1984, PROGR SURFACE SCI, V16, P327

[10] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729