DOPANT INCORPORATION, FERMI-LEVEL MOVEMENT, AND BAND OFFSET AT THE GE/GAAS(001) INTERFACE

被引：16

作者：

CHAMBERS, SA

IRWIN, TJ

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.38.7858

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7858 / 7861

页数：4

共 18 条

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