Strain engineering of self-organized InAs quantum dots

被引:109
作者
Guffarth, F
Heitz, R
Schliwa, A
Stier, O
Ledentsov, NN
Kovsh, AR
Ustinov, VM
Bimberg, D
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg, Russia
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 08期
关键词
D O I
10.1103/PhysRevB.64.085305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of a thin gallium-rich InxGa1-xAs cap layer on the electronic properties of self-organized InAs quantum dots (QD's) are investigated both experimentally and theoretically. Increasing the indium concentration of the cap layer allows tuning the ground state transition to lower energies maintaining strong quantization of the electronic states. Strain-driven partial decomposition of the InxGa1-xAs cap layer increases the effective QD size during growth and the altered barrier composition leads to a partial strain relaxation within the capped InAs QD's. Strain engineering the structural properties of the QD's as well as the actual confining potential offers a pathway to control the electronic properties, e.g., to shift the emission wavelength of lasers based on self-organized InAs QD's to the infrared.
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页数:7
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