Simulation of quantum dead-layers in nanoscale ferroelectric tunnel junctions

被引：21

作者：

Indlekofer, KM

Kohlstedt, H

机构：

[1] Forschungszentrum Julich, Inst Thin Films & Interfaces ISG1, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[3] Forschungszentrum Julich, Inst Solid State Res, D-52425 Julich, Germany

[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[5] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

EUROPHYSICS LETTERS | 2005年 / 72卷 / 02期

关键词：

D O I：

10.1209/epl/i2005-10219-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The usage of nanoscale ferroelectric films as tunnel barriers in electronic devices offers a unique possibility to study the physics of ultrathin ferroelectric materials by means of electronic transport. In this letter, we simulate the current-voltage characteristics of a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We discuss the role of quantum effects such as Friedel oscillations, which lead to deviations from the conventional semiclassical description of contacts in such a tunneling structure. As a consequence, we predict a well-pronounced bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.

引用

页码：282 / 286

页数：5

共 19 条

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