Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

被引：43

作者：

Evstratov, IY

Kalaev, VV

Zhmakin, AI

Makarov, YN

Abramov, AG

Ivanov, NG

Smirnov, EM

Dornberger, E

Virbulis, J

Tomzig, E

von Ammon, W

机构：

[1] Univ Erlangen Nurnberg, Fluid Dynam Dept, D-91058 Erlangen, Germany

[2] Soft Impact Ltd, St Petersburg 194156, Russia

[3] Leningrad State Tech Univ, St Petersburg 195251, Russia

[4] Wacker Siltron AG, D-84479 Burghausen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 1-2期

关键词：

fluid flows; computer simulation; Czochralski method; growth from melt; semiconducting silicon;

D O I：

10.1016/S0022-0248(01)01314-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We describe a computational model based on Large Eddy Simulation to calculate 3D unsteady turbulent melt convection in Czochralski systems for Si-crystal growth. The model has been verified using temperature measurements inside the melt and along the melt-crucible surface. The effect of the crucible rotation rate on 3D turbulent structures developed in the melt is analyzed. Transformation of the melt flow with increasing argon flow rate is predicted, and the controlling effect of the argon flow on the oxygen content in the crystal is evaluated. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：22 / 29

页数：8

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