High pressure transport properties of the topological insulator Bi2Se3

被引：55

作者：

Hamlin, J. J. ^{[1
]}

Jeffries, J. R. ^{[2
]}

Butch, N. P. ^{[3
]}

Syers, P. ^{[3
]}

Zocco, D. A. ^{[1
]}

Weir, S. T. ^{[2
]}

Vohra, Y. K. ^{[4
]}

Paglione, J. ^{[3
]}

Maple, M. B. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

[3] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[4] Univ Alabama Birmingham, Dept Phys, Birmingham, AL 35294 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2012年 / 24卷 / 03期

基金：

美国国家科学基金会;

关键词：

SINGLE DIRAC CONE; SUPERCONDUCTIVITY; SEMICONDUCTORS; BI2TE3; GAP;

D O I：

10.1088/0953-8984/24/3/035602

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 toward increasingly insulating behavior and then, at higher pressures, the sample appears to enter a fully metallic state coincident with a change in the crystal structure. Within the low pressure phase, Bi2Se3 exhibits an unusual field dependence of the transverse magnetoresistance Delta rho(xx) that is positive at low fields and becomes negative at higher fields. Our results demonstrate that pressures below 8 GPa provide a non-chemical means to controllably reduce the bulk conductivity of Bi2Se3.

引用

页数：5

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