TEM and PEELS characterization of diamond films grown on Si substrates

A detailed cross-sectional analysis at the interface of a polycrystalline diamond film and a crystalline silicon substrate was performed using high resolution electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Using the method described here, we can produce diamond films on non-scratched Si substrates by hot filament CVD (with the help of a SIC buffer layer). The size of the particles produced is in the range from 0.5 to 1.0 mu m An orientation relationship between the diamond particles and the SiC buffer layer is also found. Finally, it seems clear that a K-edge EELS spectrum is sufficient to distinguish amorphous carbon, graphite or diamond.