Optimization of the tunability of barium strontium titanate films via epitaxial stresses

被引:133
作者
Ban, ZG
Alpay, SP [1 ]
机构
[1] Univ Connecticut, Dept Met & Mat Engn, Storrs, CT 06269 USA
[2] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
关键词
D O I
10.1063/1.1524310
中图分类号
O59 [应用物理学];
学科分类号
摘要
The tunability of epitaxial barium strontium titanate films is analyzed theoretically using a phenomenological model. The relative dielectric constant of Ba0.5Sr0.5TiO3 (BST 50/50) films as a function of the applied external electric field is calculated and an electric field-misfit strain phase diagram is developed to assist in the interpretation of the behavior. On the basis of these results, the tunability of BST 50/50 films as a function of the misfit strain is provided and compared with the experimental data in the literature. Analysis shows that a high tunability can be achieved by adjusting the misfit strain especially in the vicinity of a structural phase transformation. The misfit strain in epitaxial films can be controlled with the selection of a substrate material or variations in the film thickness. The film thickness dependence is due to misfit dislocation formation at the film growth temperature. A critical thickness to attain the maximum tunability can be defined for BST 50/50 films on MgO (similar to90 nm) and LaAlO3 (similar to120 nm) substrates. It is suggested that the selection of the substrate and/or the film thickness can be chosen as design parameters to manipulate the strain state in the film to achieve optimum tunability. (C) 2003 American Institute of Physics.
引用
收藏
页码:504 / 511
页数:8
相关论文
共 49 条
[31]   Effect of mechanical boundary conditions on phase diagrams of epitaxial ferroelectric thin films [J].
Pertsev, NA ;
Zembilgotov, AG ;
Tagantsev, AK .
PHYSICAL REVIEW LETTERS, 1998, 80 (09) :1988-1991
[32]   Curie-Weiss-type law for the strain and stress effects on the dielectric response of ferroelectric thin films [J].
Pertsev, NA ;
Koukhar, VG ;
Waser, R ;
Hoffmann, S .
APPLIED PHYSICS LETTERS, 2000, 77 (16) :2596-2598
[33]   Phase transitions and strain-induced ferroelectricity in SrTiO3 epitaxial thin films [J].
Pertsev, NA ;
Tagantsev, AK ;
Setter, N .
PHYSICAL REVIEW B, 2000, 61 (02) :R825-R829
[34]   ENERGETICS AND GEOMETRY OF 90-DEGREES DOMAIN-STRUCTURES IN EPITAXIAL FERROELECTRIC AND FERROELASTIC FILMS [J].
PERTSEV, NA ;
ZEMBILGOTOV, AG .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :6170-6180
[35]   Domain populations in epitaxial ferroelectric thin films: Theoretical calculations and comparison with experiment [J].
Pertsev, NA ;
Zembilgotov, AG .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) :6401-6406
[36]   The properties of ferroelectric films at small dimensions [J].
Shaw, TM ;
Trolier-McKinstry, S ;
McIntyre, PC .
ANNUAL REVIEW OF MATERIALS SCIENCE, 2000, 30 :263-298
[37]   The effect of stress on the dielectric properties of barium strontium titanate thin films [J].
Shaw, TM ;
Suo, Z ;
Huang, M ;
Liniger, E ;
Laibowitz, RB ;
Baniecki, JD .
APPLIED PHYSICS LETTERS, 1999, 75 (14) :2129-2131
[38]   INTERACTION OF ELASTIC STRAIN WITH STRUCTURAL TRANSITION OF STRONTIUM TITANATE [J].
SLONCZEWSKI, JC ;
THOMAS, H .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (09) :3599-+
[39]   DOMAIN CONFIGURATIONS DUE TO MULTIPLE MISFIT RELAXATION MECHANISMS IN EPITAXIAL FERROELECTRIC THIN-FILMS .3. INTERFACIAL DEFECTS AND DOMAIN MISORIENTATIONS [J].
SPECK, JS ;
DAYKIN, AC ;
SEIFERT, A ;
ROMANOV, AE ;
POMPE, W .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1696-1706
[40]   DOMAIN CONFIGURATIONS DUE TO MULTIPLE MISFIT RELAXATION MECHANISMS IN EPITAXIAL FERROELECTRIC THIN-FILMS .1. THEORY [J].
SPECK, JS ;
POMPE, W .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) :466-476