Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits

被引:83
作者
Cote, DR [1 ]
Nguyen, SV
Stamper, AK
Armbrust, DS
Többen, D
Conti, RA
Lee, GY
机构
[1] IBM Corp, Microelect Div, E Fishkill Facil, Hopewell Jct, NY 12533 USA
[2] IBM Corp, Div Storage Syst Prod, San Jose Facil, San Jose, CA 95193 USA
[3] IBM Corp, Microelect Div, Burlington Facil, Essex Jct, VT 05452 USA
[4] Siemens Microelect Inc, E Fishkill Facil, Hopewell Jct, NY 12533 USA
关键词
D O I
10.1147/rd.431.0005
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Plasma-assisted deposition of thin films is widely used in microelectronic circuit manufacturing. Materials deposited include conductors such as tungsten, copper, aluminum, transition-metal silicides, and refractory metals, semiconductors such as gallium arsenide, epitaxial and polycrystalline silicon, and dielectrics such as silicon oxide, silicon nitride, and silicon oxynitride. This paper reviews plasma-assisted chemical vapor deposition (CVD) applications and techniques for dielectric thin films. In particular, we focus on the integration, process, and reliability requirements for dielectric films used for isolation, passivation, barrier, and antireflective-coating applications in ultralarge-scale integrated (ULSI) semiconductor circuits. In addition, manufacturing issues and considerations for further work are discussed.
引用
收藏
页码:5 / 38
页数:34
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