Gate dielectric microstructural control of pentacene film growth mode and field-effect transistor performance

被引：124

作者：

Kim, Choongik

Facchetti, Antonio

Marks, Tobin J.

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 18期

关键词：

D O I：

10.1002/adma.200700101

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic semiconductor/dielectric interfacial characteristics play a critical role in influencing organic thin-film transistor (OTFT) performance characteristics (see figure). Clear correlations between pentacene film deposition temperature, estimated polymer dielectric surface microstructural mobility, and the corresponding film growth mode, semiconductor phase composition, and carrier mobilities are established.

引用

收藏

页码：2561 / +

页数：7

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