Spatially controlled, nanoparticle-free growth of InP nanowires

被引：72

作者：

Poole, PJ ^{[1
]}

Lefebvre, J ^{[1
]}

Fraser, J ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1608486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique for the growth of InP nanowires, which does not rely on the vapor-liquid-solid growth mechanism, is demonstrated using selective-area chemical beam epitaxy. The nanowires are precisely positioned on an InP wafer and are always aligned along the available substrate <111>A directions. They have diameters as small as 40 nm, and typical lengths of 600 nm. They are found to be optically active, with thin embedded InAs layers showing quantum-dot-like behavior with well-defined excited states. (C) 2003 American Institute of Physics.

引用

页码：2055 / 2057

页数：3

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