H2S molecular beam passivation of Ge(001)

被引：10

作者：

Merckling, C. ^{[1
]}

Chang, Y. C. ^{[2
,3
]}

Lu, C. Y. ^{[2
,4
]}

Penaud, J. ^{[5
]}

El-Kazzi, M. ^{[6
]}

Bellenger, F. ^{[1
,2
]}

Brammertz, G. ^{[1
]}

Hong, M. ^{[3
]}

Kwo, J. ^{[3
]}

Meuris, M. ^{[1
]}

Dekoster, J. ^{[1
]}

Heyns, M. M. ^{[1
,2
]}

Caymax, M. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, B-3001 Louvain, Belgium

[3] Natl Tsing Hua Univ, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Hsinchu 300, Taiwan

[5] Riber, F-95873 Bezons, France

[6] SUN Synchrotron, F-91192 Gif Sur Yvette, France

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 04期

关键词：

Passivation; H2S; Molecular beam epitaxy; High-mu semiconductors; GE; SURFACE;

D O I：

10.1016/j.mee.2010.09.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(0 0 1) using molecular H2S. The modification of the semiconductor surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. MOS capacitors are fabricated to extract interface state density, and finally we demonstrate the efficiency of the passivation scheme using a combination with an ultra thin Al interlayer. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：399 / 402

页数：4

共 18 条

[1] Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole [J].