High FET Performance for a Future CMOS GeO2-Based Technology

被引：54

作者：

Bellenger, Florence ^{[1
,2
]}

De Jaeger, Brice ^{[1
]}

Merckling, Clement ^{[1
]}

Houssa, Michel ^{[3
]}

Penaud, Julien ^{[4
]}

Nyns, Laura ^{[1
]}

Vrancken, Evi ^{[1
]}

Caymax, Matty ^{[1
]}

Meuris, Marc ^{[1
]}

Hoffmann, Thomas ^{[1
]}

De Meyer, Kristin ^{[1
,2
]}

Heyns, Marc ^{[1
,5
]}

机构：

[1] Interuniv Microelect Ctr, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Leuven, Belgium

[4] Riber SA, F-95873 Bezons, France

[5] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Leuven, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 05期

关键词：

Germanium (Ge); high-kappa dielectric; interfacial quality; metal-oxide-semiconductor field-effect transistors (MOSFETs); molecular beam deposition (MBD); MOS DEVICES; INTERFACE; PASSIVATION; MOSFETS; DENSITY;

D O I：

10.1109/LED.2010.2044011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In Germanium-based metal-oxide-semiconductor field-effect transistors, a high-quality interfacial layer prior to high-kappa deposition is required to achieve low interface state densities and prevent Fermi level pinning. In this letter, the physical and electrical properties of a Ge/GeO2/Al2O3 gate stack are investigated. The GeO2 interlayer grown by radical oxidation and the formation of a germanate (GeAlOX) layer at the interface provide a stable high-quality passivation of the Ge channel. High carrier mobilities (235 cm(2)/V.s for electrons and 265 cm(2)/V.s for holes) are demonstrated for a relatively low 3.7-nm equivalent oxide thickness (EOT), enabling the realization of a high-performance CMOS technology with potential EOT scaling.

引用

页码：402 / 404

页数：3

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