Interface Properties Improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 Gate Stacks using Molecular Beam Deposition

被引：12

作者：

Bellenger, F. ^{[1
,2
]}

Merckling, C. ^{[1
]}

Penaud, J. ^{[3
]}

Houssa, M. ^{[1
,2
]}

Caymax, M. ^{[1
]}

Meuris, M. ^{[1
]}

De Meyer, K. ^{[1
,2
]}

Heyns, M. M. ^{[1
,2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[3] Riber, F-95873 Bezons, France

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 | 2008年 / 16卷 / 05期

关键词：

D O I：

10.1149/1.2981622

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Physical and electrical properties of Ge/Al2O3/Pt and Ge/GeO2/Al2O3/Pt gate stacks using molecular beam deposition were proposed in this work. In spite of a straight deposition of Al2O3 on Ge substrate, XPS and TEM analysis revealed the formation of a thin interfacial layer coming from the intermixing between Ge sub-oxides and the high-kappa dielectric. Electrical measurements showed a high density of interface states (3x10(12)eV(-1).cm(-2)) mainly due to the presence of this interlayer. Performing a FGA in 10% H-2/90% N-2 on such structures leads to a significant reduction of D-IT and leakage current density. Moreover, growing an in-situ GeO2 layer on Ge before high-K deposition allowed us to reduce the interface states and to reach a very low D-IT-value of 1 similar to 2x10(11)eV(-1).cm(-2) for Ge/GeO2/Al2O3 gate stacks after FGA, providing the efficient passivation of Ge/GeO2 interface. It has also been demonstrated that Al2O3 was a good capping layer, preventing from Ge/GeO2 interfacial degradation under high temperature treatment.

引用

页码：411 / +

页数：2

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