Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

被引：31

作者：

Chen, Y. C. ^{[1
,2
]}

Zhong, X. Y. ^{[6
]}

Konicek, A. R. ^{[3
]}

Grierson, D. S. ^{[4
]}

Tai, N. H. ^{[2
]}

Lin, I. N. ^{[5
]}

Kabius, B. ^{[6
]}

Hiller, J. M. ^{[6
]}

Sumant, A. V. ^{[7
]}

Carpick, R. W. ^{[8
]}

Auciello, O. ^{[1
,7
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[3] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[4] Univ Wisconsin, Dept Engn Phys, Madison, WI 53706 USA

[5] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan

[6] Argonne Natl Lab, Ctr Electron Microscopy, Argonne, IL 60439 USA

[7] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[8] Univ Penn, Dept Mech Engn & Appl Mech, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2838303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H-2/CH4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (similar to 6 nm rms) and higher growth rate (similar to 1 mu m/h). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships. (C) 2008 American Institute of Physics.

引用

页数：3

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