Epitaxial-graphene/graphene-oxide junction: An essential step towards epitaxial graphene electronics

被引:286
作者
Wu, Xiaosong [1 ]
Sprinkle, Mike [1 ]
Li, Xuebin [1 ]
Ming, Fan [1 ]
Berger, Claire [1 ,2 ]
de Heer, Walt A. [1 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Inst Neel, CNRS, F-38042 Grenoble, France
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.101.026801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm(2)/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.
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页数:4
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